中文摘要：

采用二维流体模型对扫描刻蚀加工中的微小等离子体发生器的刻蚀机理进行了数值仿真研究。该微小等离子体发生器为微空心阴极放电器件，当工作气体为SF6，工作气压在5kPa～9kPa时，空心阴极处微孔半径为0．25μm时，空心阴极外部区域的F原子的有效弥散长度在0．5μm-1．8μm之间变化，且浓度在3×10^11 cm^-3～1．7×10^12 cm^-3之间，基本满足扫描刻蚀加工的需求。

英文摘要：

The etching mechanism of the microplasma reactor for Scanning Plasma Etching is digitally simulated with a two dimensional fluid model. The reactor was a microhollow cathode discharge device. When the operating gas is SF6 and its pressure is 5 kPa - 9 kPa, the F atom dispersion length outside the hollow cathode（0.25 micrometer diameter） is between 0.5μm and 1.8 μm, the density of F atom is between 3×10^11 cm^-3 - 1.7×10^12 cm^-3, which could satisfy the requirement for silicon scanning etching.