对物理冶金法提纯的低成本多晶硅材料进行了磷吸杂实验研究,结果表明,950℃下时吸杂4h去杂效果最好,对磷吸杂机理进行了定性的分析和讨论。把去除吸杂层与制备绒面工艺结合起来,达到较好的效果,节省了太阳电池制备的时间和成本。
Phosphorus(P) gettering experiments were carried out to study multicrystalline silicon wafers purified by physical metallurgy method.It is found that the best results of P gettering was achieved at 950 ℃ for 4 hours.The mechanism for P gettering is analysed and discussed.Combined the texturing process with removing the gettering layer,a better result can be obtained,saveing time and cost for the fabrication of solar cells.