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Fracture mechanics analysis on Smart-Cut^R technology. Part 2: Effect of bonding flaws
  • ISSN号:0567-7718
  • 期刊名称:《力学学报:英文版》
  • 时间:0
  • 分类:O411.1[理学—理论物理;理学—物理] U448.210.6[建筑科学—桥梁与隧道工程;交通运输工程—道路与铁道工程]
  • 作者机构:[1]Centre for Advanced Materials Technology (CAMT),School of Aerospace, Mechanical and MechatronicEngineering (AMME) J07, University of Sydney,Sydney, NSW 2006, Australia, [2]Department of Engineering Mechanics,Tsinghua University, Beijing 100084, China
  • 相关基金:The project supported by the Australian Research Council (ARC), the National Natural Science Foundation of China (10525210 and 10732050) and 973 Project (2004CB619303). BG, HYL, and YWM are, respectively, Postdoctoral Fellow, Research Fellow, and Federation Fellow supported by the ARC and tenable at the University of Sydney.
中文摘要:

部分地,聪明切割的过程,缺陷由尺寸描绘了的结合的效果和在切开前后的内部压力上的 2 纸被使用破裂力学模型学习。有大尺寸的结合的缺陷是容易的引起缺点生长的严重偏差,这被发现,当切开时,导致薄层的一个非转移的区域。在结合的缺陷的内部压力是很小的一个实际聪明切割的过程,大界面的缺点总是在切开的过程支持缺点生长。同时,增加结合的缺陷的内部压力减少在切开前的缺点生长和它的偏差。stiffener 限制的松驰的机制被建议澄清结合的缺陷的效果。而且,当结合的缺陷是在场的时,切开的过程的进步被分析。在切开以后,有大尺寸和高内部的压力的那些结合的缺陷在高温度的退火期间为薄电影的 blistering 是脆弱的。

英文摘要:

In Part 2 of the paper on the Smart-Cut process, the effects of bonding flaws characterized by the size and internal pressure before and after splitting are studied by using fracture mechanics models. It is found that the bonding flaws with large size are prone to cause severe deviation of defect growth, leading to a non-transferred area of thin layer when splitting. In a practical Smart-Cut process where the internal pressure of bonding flaws is very small, large interfacial defects always promote defect growth in the splitting process. Meanwhile, increasing the internal pressure of the bonding flaws decreases the defect growth and its deviation before splitting. The mechanism of relaxation of stiffener constraint is proposed to clarify the effect of bonding flaws. Moreover, the progress of the splitting process is analyzed when bonding flaws are present. After splitting, those bonding flaws with large size and high internal pressure are vulnerable for the blistering of the thin film during high-temperature annealing.

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期刊信息
  • 《力学学报:英文版》
  • 中国科技核心期刊
  • 主管单位:中国科学技术协会
  • 主办单位:中国力学学会 中国科学院力学研究所
  • 主编:卢天健
  • 地址:北京市海淀区北四环西路15号
  • 邮编:100190
  • 邮箱:actams@cstam.org.cn
  • 电话:010-62536271
  • 国际标准刊号:ISSN:0567-7718
  • 国内统一刊号:ISSN:11-2063/O3
  • 邮发代号:2-703
  • 获奖情况:
  • 国内外数据库收录:
  • 被引量:352