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铬掺杂二氧化硅纳米球的铬辅助合成和尺寸控制
  • 时间：0
  • 分类：TN3[电子电信—物理电子学]
  • 作者机构：[1]新加坡南洋理工大学数理学院物理与应用物理系,新加坡637371
  • 相关基金：Singapore Ministry of Education Research Grants （ SUG 20/06 and RG 46/07）, the program of National Natural Science Foundation of China （60778040 and 60878039）
作者： 王丹丹[1], 吴韬[1]
关键词： Cr掺杂SiO2, 纳米球, 氧含量, Cr-doped silica, oxygen content, nanospheres
中文摘要：

采用汽相传输技术，利用Si为衬底，在700℃制备了Cr掺杂的SiO2纳米球。CrCl2粉末不但可以作为掺杂剂，还可以通过和衬底硅反应，从而降低了SiO2纳米球的合成温度。并且通过改变载流气体中氧气的含量可以控制SiO2纳米球的尺寸和氧含量。这种采用Cl辅助合成并对纳米球尺寸、氧含量、掺杂元素含量进行控制的方法为纳米材料合成技术提供了新的手段。

英文摘要：

Cr-doped silica nanospheres （NS） have been synthesized on Si substrates at 700℃ with a vapor transport method. CrCl2 powder not only serves as the source for Cr doping, but also generates chlorine gas, which reacts with the Si substrates and lowers the growth temperature. The diameter and the oxygen concentration of NS can be tuned by the oxygen content in the carrying gas. This chlorine-assisted synthesis and the associated controls on size, doping, and oxygen deficiency of the silica NS may help to pave the way for potential technological applications.

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