中文摘要：

使用物理气相传输方法（PVT）制备了直径为3英寸、非故意深能级杂质（如：钒）掺杂的半绝缘4H-Si C晶体。使用二次离子质谱（SIMS）、拉曼光谱面扫描、非接触电阻率测试面扫描和高分辨XRD摇摆曲线对衬底的浅能级和两性深能级杂质的浓度、衬底晶型、衬底电阻率和衬底结晶质量进行了表征。结果表明,衬底全部面积电阻率大于4×109Ω·cm,钒浓度低于探测限,这表明浅能级杂质浓度已经低至可以被本征缺陷引入深能级完全补偿范围;拉曼光谱结果表明衬底4H-Si C晶型面积比例为100%;（004）衍射面高分辨X射线摇摆曲线半宽仅25秒,表明了衬底良好的结晶质量。使用上述高纯半绝缘衬底制备的高电子迁移率器件（HEMT）具备良好的电学性质。

英文摘要：

3 inch semi-insulting 4H-Si C crystal has been grown by physical vapor transport（ PVT）method without the intentional introduction of elemental deep-level dopants,such as vanadium. Wafers cut from this crystal were characterized by second ion mass spectroscopy（ SIMS）,raman spectroscopy mapping, contact less resistivity measurement and high resolution X-ray diffraction（ HRXRD）.Resistivity of whole wafer is higher than 4 × 109Ω·cm,and the concentration of vanadium is lower than the detection limit which indicates that shallow donor and acceptors can be completely compensated by the deep energy levels introduced by intrinsic point defects. The polytype of whole wafer is 4H-Si C without other polytypes inclusions and the FWHM of the Rocking Curve of（ 004） diffraction peak is only 25 seconds,which indicates the good crystalline quality of the crystal. High Electron Mobility Transistor（ HEMT） fabricated on those wafers exhibit excellent electronic quality.