中文摘要：

我们与强壮的纺纱轨道的 couplings 在三维、二维的材料处于悦耳的拓扑的量状态考察我们的理论进展。在三维的系统，我们建议新悦耳的拓扑的绝缘体，拓扑的绝缘在说的基于铋的 skutterudites 能被外部种类导致。涉及拓扑的乐队倒置过程的 orbitals 是 d-orbitals, 和 p 轨道，不同于象双性人那样的典型拓扑的绝缘体 < 潜水艇 class= “ a-plus-plus ” > 2 Se < 潜水艇 class= “ a-plus-plus ” > 3 和 BiTeI，在仅仅 p 轨道涉及乐队倒置的地方，处理。由于大 d 电子的状态的存在，在我们的建议拓扑的绝缘体的电子相互作用在另外的常规拓扑的绝缘体是比那强壮得多的。在二维的系统，我们调查了 3d-transition-metal-doped silicene。用一个分析模型和第一原则的 Wannier 插值，我们表明与象钒那样的金属能支撑的某些 3d 转变装饰的那 silicene 稳定的量异常霍尔效果。我们也预言量山谷霍尔效果和电子上悦耳的拓扑的状态能在精力乐队倒置发生的某些 transition-metal-doped silicenes 被认识到。这些调查结果提供拓扑的状态能任意地在被控制的现实主义的材料。

英文摘要：

We review our theoretical advances in tunable topological quantum states in three- and two- dimensional materials with strong spin-orbital couplings. In three-dimensional systems, we propose a new tunable topological insulator, bismuth-based skutterudites in which topological insulating states can be induced by external strains. The orbitals involved in the topological band-inversion process are the d- and p-orbitals, unlike typical topological insulators such as Bi=Sea and BiTeI, where only the p-orbitals are involved in the band-inversion process. Owing to the presence of large d-electronic states, the electronic interaction in our proposed topological insulator is much stronger than that in other conventional topological insulators. In two-dimensional systems, we in- vestigated 3d-transition-metal-doped silicene. Using both an analytical model and first-principles Wannier interpolation, we demonstrate that silicene decorated with certain 3d transition metals such as vanadium can sustain a stable quantum anomalous Hall effect. We also predict that the quantum valley Hall effect and electrically tunable topological states could be realized in certain transition-metal-doped silicenes where the energy band inversion occurs. These findings provide realistic materials in which topological states could be arbitrarily controlled.