中文摘要：

键合线脱落是IGBT芯片一种普遍的失效形式,铝键合线故障在一定程度上会影响门极杂散阻抗。杂散阻抗的改变又会引起门极电信号的变化,因此通过门极测量信号的变化来表征其杂散阻抗的改变,进而判断IGBT芯片是否发生铝键合线脱落故障。对门极杂散阻抗与键合线故障之间的关系进行了研究,为识别IGBT模块铝键合线故障提供了依据。

英文摘要：

Bonding wire lift- off is a common failure mode, which will first affect the gate stray impedance. The changes of the gate stray impedance cause changes in the signals of the gate, which can be characterized by signals of the gate, and then determine whether there IGBT chip aluminum bonding wire lift- off or not. In this paper, the relationship between bonding wire failure and the gate stray impedance is studied results provide important basis for identifying bonding wire failure of IGBT module.