中文摘要：

将BiGaO3和BiInO3分别引入BiScO3-Pb—TiO3（BSPT）体系，并通过氧化物合成法制备了0．075BiGaO3-（0．925-z）BiScO3-xPbTiO3（BGSPTx，x=0．58～O．62）和0．075BilnO3-（0．925-x）BiScO3-xPb-TiO3（BISPTx，x=0．61～0．65）压电陶瓷。X射线衍射分析表明，BiGaO。和BilnO。的替换掺杂均不影响BSPT体系的钙钛矿结构。随着PbTiO3含量的增加，BGSPTx和BISPTx陶瓷由三方钙钛矿结构逐渐变到四方结构，其三方-四方准同型相界分别位于x=0．60和x=0．62附近。在准同型相界附近，BGSPT。陶瓷的压电常数d33,机电耦合系数kp为分别为350pC／N和52．0％，而BISPT。的d33高达475pC／N，kp为52．3%。介电常数的温度特性测试表明，掺入Ga抖可以有效地提升BSPT体系的居里温度，其MPB组分（x=0．60）居里温度高达472℃，而掺入In^3＋对BSPT体系的居里温度影响则不明显。

英文摘要：

Ceramics of 0. 075BiGaO3-（0. 925- x）BiScO3-xPbTiO3 （BGSPTx, x = 0. 58-0. 62 ） and 0. 075BiInO3- （0. 925-x）BiScO3-xPbTiO3 （BISPTx, x=0. 61-0. 65） were prepared by conventional solid state reactions when BiGaO3 and BiInO3 was doped into BiScO3-PbTiOx （BSPT） system, respectively. The analysis results of X-ray diffraction reveals that BGSPTx and BISPTx posses single perovskite structure, in which MPB between tetragonal to rhombohedral phase transformation appears for BGSPTx,x=0.60 and BISPTx, x=0.62 respectively. Samples close to MPB gave piezoelectric and electromechanical coupling coefficients of BGSPTx about 350pC/N and 52.0%, respectively, comparing of BISPTx about 475pC/N and 52.3 %, respectively. The results of dielectric permittivity versus temperature proved that the introduction of Ga^3＋ into BSPT system really increased the Tc of BSPT（x=0.60, Tc =472℃） ceramics,but the same result was not observed for introduction of In^3＋ into BSPT system.