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中文摘要：
报道了在兰州重离子加速器国家实验室电子回旋共振离子源原子物理实验平台上,用高电荷态^40Ar^q＋（1≤q≤12）离子作用于半导体Si固体表面时的电子发射产额实验测量.实验中,通过改变炮弹离子的电荷态和引出电压选取其不同的势能和动能,系统地研究了入射离子势能沉积和与其在固体中的电子能损对表面电子发射产额的贡献.结果表明,作为引起表面电子发射的两个主要因素,单离子的电子发射产额与炮弹离子在固体表面的势能沉积和电子能损都有近似的正比关系.
英文摘要：
The electron emission yield of the interaction of highly charged argon ions with silicon surface is reported. The experiment was done at the Atomic Physics Research Platform on the Electron Cyclotron Resonance （ECR） Ion Source of the National Laboratory HIRFL （Heavy Ion Research Facility in Lanzhou）. In the experiment, the potential energy and kinetic energy was selected by varying the projectile charge states and extracting voltage, thus the contributions of the projectile potential energy deposition and electronic energy loss in the solid are extensively investigated. The results show that, the two main factors leading to surface electron emission, namely the potential energy deposition and the electronic energy loss, are both approximately proportional to the electron emission yield per ion.
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