用反应磁控溅射法在不同的氮分压下沉积了Nb-Si-N薄膜.结果表明:Nb-Si-N膜的成分、结构和性能随氮分压的改变而不同.随氮分压的增加,Nb-Si-N膜的Nb/Si比和表面粗糙度减小;薄膜的电阻值和微硬度增加.Nb-Si-N膜的结构为纳米晶NbN与类似Si3N4非晶相组成的纳米复合结构,且随着氮分压的增加,Nb-Si-N膜的非晶倾向增强,晶粒尺寸减小.
The Nb-Si-N films were deposited by reactive magnetron sputtering with different N2 partial pressures. The result showed that the composition, microstructure and properties of the Nb-Si-N films depend strongly on the N2 partial pressure. As the N2 partial pressure increasing, the Nb/Si ratio and the surface roughness decease, but the bulk resistance and microhardness of the Nb-Si-N films increase. The microstructure of Nb-Si-N films is a nano-composite structure consisting of nano-sized NbN crystallites and amorphous Si3N4-like compound of Si-N. With the increase of N2 partial pressure, the amorphous tendency of Nb-Si-N films increases and the grain size decreases.