中文摘要：

采用波长532nm的激光脉冲在n型单晶硅衬底上扫描预置的硼源，进行太阳电池发射极制备的研究。通过全激光掺杂获得方块电阻最低为30Ω/□的发射极，经过退火后少子寿命大幅度提升；在此基础上，初步制备的太阳电池的开路电压“达到597mV，转换效率为13．58％。研究表明，激光全掺杂是制备太阳电池发射极的有效方法。

英文摘要：

532 nm laser pulse was applied for full area doping solar cell emitters on n-type monocrystalline silicon substrate with boron precursor layer, sheet resistance of 30 Ω/□ was ob- tained and effected lifetime improved significantly after annealing. Solar cell＇s open circuit voltage U∞ reached 597 mV with a conversion efficiency of 13.58%. Demonstrating laser doping is an ef- fective method of preparation of solar cell emitters.