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HRXRD and Raman study of irradiation effects in InGaN/GaN layers induced by 2.3 MeV Ne and 5.3 MeV K
  • ISSN号：0168-583X
  • 期刊名称：Nuclear Instruments and Methods in Physics Researc
  • 时间：0
  • 页码：1063-1066
  • 相关项目：GaN异质结中快重离子引起电离损伤的研究
作者： Zhang, L. M.|Zhang, C. H.|Zhang, L. Q.|Jia, X. J.|Han, L. H.|Xu, C. L.|Zhang, Y.|Jin, Y. F.|
同期刊论文项目
GaN异质结中快重离子引起电离损伤的研究
期刊论文 24
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