位置：成果数据库 > 期刊 > 期刊详情页
Bandgap reduction responsible for the improved thermoelectric performance of bulk polycrystalline In
  • 期刊名称：J. Appl. Phys., 110, 2011,023708
  • 时间：0
  • 页码：023708-1-023708-5
  • 语言：英文
  • 相关项目：含纳米半导体相的Bi-Te基热电复合材料
作者： Li Yiyun|Deng Yuan|Zhang Xiaojun|Cui Jiaolin|Liu Xianglian|
同期刊论文项目
含纳米半导体相的Bi-Te基热电复合材料
期刊论文 18 会议论文 1 专利 6
同项目期刊论文
Thermoelectric properties of pseudo-binary alloy (Ag0.365Sb0.558Te)0.975(GeTe)0.025 prepared by spar
Modified structures and improved thermoelectric property in Ag-added polycrystalline In2Se3
添加Ge的In_(10)Sb_(10)Ge三元合金热电性能(英文)
Thermoelectric Properties of an Al-Doped In-Sn-Te-Based Alloy
非等电子Sb替换Cu和Te后黄铜矿结构半导体Cu3Ga5Te9的热电性能
Thermoelectric properties of Cu-added Zn-Sb based alloys with multi-phase equilibrium
Thermoelectric properties in p-type nanostructured Ge-doped Sb100GeTe150 alloy
Effects of Al addition on the thermoelectric properties of Zn-Sb based alloys
Effects of Cu5Zn3 addition on the thermoelectric properties of Zn4Sb3
添加Sb的Ga2Te3合金热电性能
Cu addition and its role in thermoelectric properties and nanostructuring in the series compounds (I
Thermoelectric properties in nanostructured homologous series alloys GamSbnTe1.5(m+n)
Sb掺杂Mg2-xZnxSi（0≤x≤0.1）固溶体的热电性能
黄铜矿型三元合金CuGaTe_2的热电性能
添加Ge的In10Sb10Ge三元合金热电性能
共掺杂Cu,Te后禁带宽度变窄对In_2Se_3基半导体热电性能的影响
宽带隙n-型半导体CuIn_5Se_8的热电性能研究