中文摘要：

采用大气开放式金属有机化合物化学气相沉积方法（AP-MOCVD），以四异丙醇钛（TTIP）为原料，改变反应物气化温度、沉积温度、基片与喷嘴的距离、载气流速4种工艺条件在玻璃基片上制备TiO2薄膜。实验结果表明沉积温度主要影响薄膜的物相结构，当沉积温度在300℃时沉积物是无定形的；沉积温度为350℃和400℃时，薄膜由单一的锐钛矿相构成；沉积温度在450℃时出现了少量金红石；继续升高沉积温度金红石的量逐渐增加。气化温度、基片与喷嘴的距离、载气流速这3个工艺条件主要影响薄膜的形貌和沉积难易程度。基片类型对薄膜沉积没有影响。

英文摘要：

TiO2 thin films were prepared on the glass substrate by air opened metal organic chemical vapor deposition（AP-MOCVD） with TTIP as the metal organic source. The main conditions of experiment, i. e. vaporizing temperature,substrate temperature,distance between substrate and nozzle and the N2 flow rate, were varied. The result shows that the structure of the TiO2 thin film is affected mainly by the substrate temperature. When the substrate temperature is 300 ℃, the film is amorphous; when the substrate temperatures are 350 ℃ and 400 ℃ ,the thin film comprises of single anatase;and when the substrate temperature is 450 ℃, there appears some ruffle in the thin film which increases with the substrate temperature increasing. The other conditions, i. e. the vaporization temperature,distance between substrate and nozzle and the N2 flow rate,mainly affect the surface morphology of thin film and the difficulty of preparing the film. The type of substrate does not affect the growth of the thin film.