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Study of irradiation induced changes of electrical and functional characteristics in Ge doped Si dio
  • 所属机构名称：浙江大学
  • 会议名称：26th International Conference on Defects in Semiconductors
  • 成果类型：会议
  • 相关项目：空间用掺锗硅单晶及器件的微缺陷研究
作者： Gaubas, E.1|Uleckas, A.1|Rafi, J.M.2|Chen, J.3|Yang, D.3|Vanhellemont, J.4|
同会议论文项目
空间用掺锗硅单晶及器件的微缺陷研究
期刊论文 12 会议论文 5
同项目会议论文
Impurity engineering of czochralski silicon
Carrier lifetime studies in diode structures on Si substrates with and without Ge doping
Germanium doping of Si substrates for improved device characteristics and yield
Oxygen precipitate nucleation in heavily antimony-doped Czochralski silicon