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Germanium doping of Si substrates for improved device characteristics and yield
  • 所属机构名称：浙江大学
  • 会议名称：China Semiconductor Technology International Conference 2010, CSTIC 2010
  • 成果类型：会议
  • 相关项目：空间用掺锗硅单晶及器件的微缺陷研究
作者： Vanhellemont, J.1|Chen, J.2, 3|Xu, W.2|Yang, D.2|Rafi, J.M.4|Ohyama, H.5|Simoen, E.6|
同会议论文项目
空间用掺锗硅单晶及器件的微缺陷研究
期刊论文 12 会议论文 5
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