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Carrier lifetime studies in diode structures on Si substrates with and without Ge doping
  • 所属机构名称：浙江大学
  • 会议名称：14th International Biannual Meeting on Gettering and Defect Engineering in Semiconductor Technology
  • 成果类型：会议
  • 相关项目：空间用掺锗硅单晶及器件的微缺陷研究
作者： Uleckas, A.1|Gaubas, E.1|Rafi, J.M.2|Chen, J.3|Yang, D.3|Ohyama, H.4|Simoen, E.5|Vanhellemont, J.6|
同会议论文项目
空间用掺锗硅单晶及器件的微缺陷研究
期刊论文 12 会议论文 5
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