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Oxygen precipitate nucleation in heavily antimony-doped Czochralski silicon
  • 所属机构名称：浙江大学
  • 会议名称：China Semiconductor Technology International Conference 2010, CSTIC 2010
  • 成果类型：会议
  • 相关项目：空间用掺锗硅单晶及器件的微缺陷研究
作者： Zhu, Weijiang1|Ma, Xiangyang1|Chen, Jiahe1|Zeng, Yuheng1|Yang, Deren1|
同会议论文项目
空间用掺锗硅单晶及器件的微缺陷研究
期刊论文 12 会议论文 5
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