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Improved Characteristics of 4H-SiC MESFETs With Partly P-type doped Space Layer
  • 所属机构名称：电子科技大学
  • 会议名称：2009 IEEE International Symposium on Microwave, Antenna, Propagation and EMC Technologies For Wirele
  • 成果类型：会议
  • 相关项目：宽禁带半导体器件噪声机理与噪声模型研究
作者： 徐锐敏|
同会议论文项目
宽禁带半导体器件噪声机理与噪声模型研究
期刊论文 11 会议论文 10
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