位置：成果数据库 > 会议 > 会议详情页
Characterization of High-frequency Noise Performance of GaN Double Heterojunction HEMT
  • 所属机构名称：电子科技大学
  • 会议名称：2010 International Conference on Material and Manufacturing Technology, ICMMT 2010
  • 成果类型：会议
  • 会场：成都
  • 相关项目：宽禁带半导体器件噪声机理与噪声模型研究
作者： 徐锐敏|
同会议论文项目
宽禁带半导体器件噪声机理与噪声模型研究
期刊论文 11 会议论文 10
同项目会议论文
Improved SiC MESFET small-signal equivalent circuit and optimizing method
The Microwave Noise Characteristics of InAlN/GaN HEMTs
Improved SiC MESFET small-signal equivalent circuit and optimizing method
The Microwave Noise Characteristics of InAlN/GaN HEMTs
A Broadband Suspended Stripline Bandpass Filter
Influence of the Al mole Fraction on Microwave Noise Performance of AlxGa1-xN/GaN HEMTs
Improved Characteristics of 4H-SiC MESFETs With Partly P-type doped Space Layer
Partial H-Plane Bandpass Filters Based on Substrate Integrated Folded Waveguide (SIFW)
A Novel 3D Active Channel High Power 4H-SiC MESFETs with Improved Breakdown Characteristic