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Improved SiC MESFET small-signal equivalent circuit and optimizing method
所属机构名称:电子科技大学
会议名称:International Conference on Microwave and Millimeter Wave Technology 2010
成果类型:会议
相关项目:宽禁带半导体器件噪声机理与噪声模型研究
作者:
徐锐敏|
同会议论文项目
宽禁带半导体器件噪声机理与噪声模型研究
期刊论文 11
会议论文 10
同项目会议论文
Characterization of High-frequency Noise Performance of GaN Double Heterojunction HEMT
The Microwave Noise Characteristics of InAlN/GaN HEMTs
Improved SiC MESFET small-signal equivalent circuit and optimizing method
The Microwave Noise Characteristics of InAlN/GaN HEMTs
A Broadband Suspended Stripline Bandpass Filter
Influence of the Al mole Fraction on Microwave Noise Performance of AlxGa1-xN/GaN HEMTs
Improved Characteristics of 4H-SiC MESFETs With Partly P-type doped Space Layer
Partial H-Plane Bandpass Filters Based on Substrate Integrated Folded Waveguide (SIFW)
A Novel 3D Active Channel High Power 4H-SiC MESFETs with Improved Breakdown Characteristic