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Influence of the Al mole Fraction on Microwave Noise Performance of AlxGa1-xN/GaN HEMTs
  • 所属机构名称：电子科技大学
  • 会议名称：International Conference on Communications, Circuits and Systems
  • 成果类型：会议
  • 会场：Milpitas
  • 相关项目：宽禁带半导体器件噪声机理与噪声模型研究
作者： 徐锐敏|
同会议论文项目
宽禁带半导体器件噪声机理与噪声模型研究
期刊论文 11 会议论文 10
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