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Ionizing radiation induced leakage current in the PD-SOI devices with different layout structures
  • 所属机构名称：工业和信息化部电子第五研究所
  • 会议名称：2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013
  • 时间：2013
  • 成果类型：会议
  • 相关项目：双极型器件的低剂量率辐射损伤机理与加速试验研究
同会议论文项目
双极型器件的低剂量率辐射损伤机理与加速试验研究
期刊论文 16 会议论文 19
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Ionizing radiation induced leakage current in the PD-SOI devices with different layout structures
Experiment and numerical simulation of total dose effects in the substrate PNP transistors