位置：成果数据库 > 会议 > 会议详情页
Experiment and numerical simulation of total dose effects in the substrate PNP transistors
  • 所属机构名称：工业和信息化部电子第五研究所
  • 会议名称：2013 International Conference on Quality, Reliability, Risk, Maintenance, and Safety Engineering, QR
  • 时间：2013
  • 成果类型：会议
  • 相关项目：双极型器件的低剂量率辐射损伤机理与加速试验研究
同会议论文项目
双极型器件的低剂量率辐射损伤机理与加速试验研究
期刊论文 16 会议论文 19
同项目会议论文
Total dose irradiation effects in the μa741 operational amplifier with different biases
Bias dependence of dose rate effects in the irradiated substrate PNP transistors
Bias dependence of dose rate effects in the irradiated substrate PNP transistors
Total dose induced bias current variation in the LM124 operational amplifier with Different Bias
Modeling of reverse subthreshold currents in the A-Si:H TFTs
Sensitive analysis of EMI effect in the μa741 operational amplifier circuit
Modeling of Thermal Behavior in the Amorphous Silicon Thin Film Transistors
Variation of Offset Voltage in the Irradiated Bipolar Voltage Comparators
Simulation of Single Event Transient Effects in the LM139 Voltage Comparator
Total dose irradiation effects in the μa741 operational amplifier with different biases
Effect of bias dependence of substrate NPN transistor on total dose irradiation
Ionizing radiation induced leakage current in the PD-SOI devices with different layout structures
Effect of bias dependence of substrate NPN transistor on total dose irradiation
Transient Current Pulse Effects of Bipolar Voltage Comparator
Simulation of Electromagnetic Interference Effect in the Bipolar Comparators and Amplifiers
Experiment and numerical simulation of total dose effects in the substrate PNP transistors
Total dose induced bias current variation in the LM124 operational amplifier with Different Bias
Ionizing radiation induced leakage current in the PD-SOI devices with different layout structures