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Interface Stabilizing and EOT Scaling of Al2O3/Ge Gate Stack with Ozone Post-Oxidation without Addit
  • 所属机构名称：浙江大学
  • 会议名称：International Conference on Solid State Devices and Materials (SSDM).
  • 时间：2012.9.26
  • 成果类型：会议
  • 相关项目：纳米MOS器件中的表面粗糙度散射机理研究
作者： Jiabao Sun|Yang Geng|Hongliang Lu|Wangran WU|Xiangdong Ye|Zhouwei Yang|Yi Shi|Yi Zhao|
同会议论文项目
纳米MOS器件中的表面粗糙度散射机理研究
期刊论文 9 会议论文 6
同项目会议论文
Effect of Alloy Scattering on Hole Mobility of sSi/sSiGe/sSOI Quantum Well pMOSFETs,
Strain-induced I-V Characteristics Modulation of p-n Junctions and MOS Capacitors in Si CMOS Devices
Electrical properties of strained Si p-n junctions,
Mobility Enhancement and Slow Traps Reduction in Interfacial Layer-Free Al2O3/Ge pMOSFETs with Ozone
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