位置：成果数据库 > 会议 > 会议详情页
The influence of package thermal resistance on the EMP injection damage effect of transistors
  • 所属机构名称：西安电子科技大学
  • 会议名称：2010 11th International Conference on Electronic Packaging Technology and High Density Packaging, IC
  • 成果类型：会议
  • 会场：Xi'an, China
  • 相关项目：半导体器件与电路的“响应型”损伤机理与实验研究
作者： Xingrong, Ren|Yintang, Yang|Zhenyang, Ma|Lihua, Ren|Changchun, Chai|Jing, Wang|
同会议论文项目
半导体器件与电路的“响应型”损伤机理与实验研究
期刊论文 34 会议论文 7 专利 2
同项目会议论文
The effect of passive component damage of an integrated Si bipolar low-noise amplifier under energy-
A package method for reducing bus crosstalk in full chip ESD protection circuit
Experimental Study on Energy Injection Damage of a GaAs Low Noise Amplifier with and without DC Bias
A Novel ESD Protection Circuit Applied in High-speed CMOS IC
Design of a novel dual pathway esd protection device using ISE-TCAD
Transient response of bipolar transistor under intense electromagnetic pulse on collector