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Photoemission of graded-doping GaN photocathode
  • ISSN号:1674-1056
  • 期刊名称:Chinese Physics B
  • 时间:0
  • 页码:037902-1-037902-5
  • 语言:英文
  • 分类:O562[理学—原子与分子物理;理学—物理] X703[环境科学与工程—环境工程]
  • 作者机构:[1]Department of Physics and Electronic Sciences, Institute of Bingzhou, Bingzhou 256603, China, [2]Institute of Electronic Engineering and Opto-Electric Technology, Nanjing University of Science and Technology, Nanfing 210094, China, [3]School of Physics and Optoelectronic Engineering, Ludong University, Yantai 264025, China
  • 相关基金:Project supported by the National Natural Science Foundation of China (Grant Nos. 60871012 and 61171042), the Natural Science Foundation of Shandong Province of China (Grant No. ZR2010FL018), and the Higher Educational Science and Technology Program of Shandong Province, China (Grant No. J10LG74).
  • 相关项目:NEA GaN光电发射机理及其制备技术研究
中文摘要:

The adsorption characteristics of Cs on GaN(0001) and GaN(000) surfaces with a coverage from 1/4 to 1 monolayer have been investigated using the density functional theory with a plane-wave ultrasoft pseudopotential method based on first-principles calculations.The results show that the most stable position of the Cs adatom on the GaN(0001) surface is at the N-bridge site for 1/4 monolayer coverage.As the coverage of Cs atoms at the N-bridge site is increased,the adsorption energy reduces.As the Cs atoms achieve saturation,the adsorption is no longer stable when the coverage is 3/4 monolayer.The work function achieves its minimum value when the Cs adatom coverage is 2/4 monolayer,and then rises with Cs atomic coverage.The most stable position of Cs adatoms on the GaN(000) surface is at H3 site for 1/4 monolayer coverage.As the Cs atomic coverage at H3 site is increased,the adsorption energy reduces,and the adsorption is still stable when the Cs adatom coverage is 1 monolayer.The work function reduces persistently,and does not rise with the increase of Cs coverage.

英文摘要:

The adsorption characteristics of Cs on GaN (0001) and GaN (0001) surfaces with a coverage from 1/4 to 1 monolayer have been investigated using the density functional theory with a plane-wave uttrasoft pseudopotential method based on first-principles calculations. The results show that the most stable position of the Cs adatom on the GaN (0001) surface is at the N-bridge site for 1/4 monolayer coverage. As the coverage of Cs atoms at the N-bridge site is increased, the adsorption energy reduces. As the Cs atoms achieve saturation, the adsorption is no longer stable when the coverage is 3/4 monolayer. The work function achieves its minimum value when the Cs adatom coverage is 2/4 monolayer, and then rises with Cs atomic coverage. The most stable position of Cs adatoms on the GaN (000i) surface is at H3 site for 1/4 monolayer coverage. As the Cs atomic coverage at H3 site is increased, the adsorption energy reduces, and the adsorption is still stable when the Cs adatom coverage is 1 monolayer. The work function reduces persistently, and does not rise with the increase of Cs coverage.

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期刊信息
  • 《中国物理B:英文版》
  • 中国科技核心期刊
  • 主管单位:中国科学院
  • 主办单位:中国物理学会和中国科学院物理研究所
  • 主编:欧阳钟灿
  • 地址:北京 中关村 中国科学院物理研究所内
  • 邮编:100080
  • 邮箱:
  • 电话:010-82649026 82649519
  • 国际标准刊号:ISSN:1674-1056
  • 国内统一刊号:ISSN:11-5639/O4
  • 邮发代号:
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  • 被引量:406