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中文摘要：
GaN光电阴极的理论研究主要集中在量子产额、电子能量分布和表面模型三个方面.国内对GaN光电阴极的研究尚处于起步阶段,存在基础理论不太明确、关键制备工艺欠成熟的问题.重点探讨了GaN光电阴极在发射机理、材料生长、表面净化、激活工艺的优化、变掺杂结构设计和稳定性等方面的研究动向、存在的相关问题及应采取的措施.根据实验结果提出了制备GaN光电阴极的可行性工艺流程.
英文摘要：
Negative electron affinity GaN photocathode with greatly advanced photoelectricity performance is described.The research of GaN photocathode focuses on the three points,i.e.,quantum yield,electron energy distribution and surface model,in the last decade.The domestic research of GaN photocathode is still in its infancy,the basic theory is not established,and preparation technology is not mature.In this paper we review emission mechanism,material growth,surface cleaning,activation process optimization,varied-doping structure design and stability of GaN photocathode.The latest experimental results confirm that the fabrication technology of GaN photocathode is feasible.
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