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中文摘要：
结合国内和国外的最新研究成果,论述了目前在NEAGaN真空面电子源研究方面的现状.从光电发射理论、表面净化方法、阴极激活工艺、光谱响应测试以及材料本身特性等方面针对GaN真空电子源的研究取得了一定成绩：初步研究了NEAGaN电子源的光电发射机理;给出了可获得原子级清洁表面的净化方法;采用Cs或Cs/O对GaN材料进行了有效激活;测试了GaN真空电子源材料的光谱响应;探讨了影响电子源量子效率的材料特性.指出了下一步研究需要关注的内容.
英文摘要：
The present status of research on negative electron affinity（NEA） GaN vacuum surface electron source is discussed with considering the latest research conclusions from our country and foreign country.Some valuable results about GaN vacuum electron source have been obtained including the theory of photoemission,the surface depuration method,the activation technique for GaN photocathode,the measurement of spectral response,the characteristics of material etc.The mechanism of photoemission for NEA GaN vacuum electron source is studied preliminarily.The depuration method of obtaining the atom cleanness surface is given.The GaN material is effectively activated with Cs or Cs/O.The spectral response of GaN vacuum electron source material is measured.The material characteristics affecting the quantum efficiency of the electron source are analyzed.The next investigation is also mentioned.
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