中文摘要：

<正>A two-stage MMIC power amplifier has been realized by use of a l-μm InP double heterojunction bipolar transistor(DHBT).The cascode structure,low-loss matching networks,and low-parasite cell units enhance the power gain.The optimum load impedance is determined from load-pull simulation.A coplanar waveguide transmission line is adopted for its ease of fabrication.The chip size is 1.5×1.7 mm~2 with the emitter area of 16×1μm×15μm in the output stage.Measurements show that small signal gain is more than 20 dB over 75.5-84.5 GHz and the saturated power is 16.9 dBm @ 79 GHz with gain of 15.2 dB.The high power gain makes it very suitable for medium power amplification.

英文摘要：

A two-stage MMIC power amplifier has been realized by use of a l-μm InP double heterojunction bipolar transistor（DHBT）.The cascode structure,low-loss matching networks,and low-parasite cell units enhance the power gain.The optimum load impedance is determined from load-pull simulation.A coplanar waveguide transmission line is adopted for its ease of fabrication.The chip size is 1.5×1.7 mm~2 with the emitter area of 16×1μm×15μm in the output stage.Measurements show that small signal gain is more than 20 dB over 75.5-84.5 GHz and the saturated power is 16.9 dBm @ 79 GHz with gain of 15.2 dB.The high power gain makes it very suitable for medium power amplification.