中文摘要：

报道了基于InP基双屏质结双板晶体管（DHBT）工艺的四指共射共基75 GHz微波单片集成（MMIC）功率放大器,器件的最高振荡频率fmax为150 GHz.放大器的输出极发射极面积为15μm×4μm.功率放大器在75 GHz时功率增益为12.3 dB,饱和输出功率为13.92 dBm.放大器在72.5 GHz处输入为2 dBm时达到最大输出功率14.53 dBm.整个芯片传输连接采用共面波导结构,芯片面积为1.06 mm×0.75 mm.

英文摘要：

A 75 GHz monolithic-microwave integrated-circuit （MMIC） four- fingers cascode power amplifier in InP double heterojunction bipolar transistors （DHBT） technology with an fmax about 150 GHz was reported. The amplifier has 15 ×4 μm^2 total emitter area and exhibits a power gain of 12.3 dB at 75 GHz with 13.92 dBm output saturated pow- er. The amplifier achieves a peak output power of 14.53 dBm with 2 dBm input power at 72.5 GHz. The MMIC adopts coplanar waveguide （CPW） structure as the transmission line structure with area of 1.06 × 0.75 mm^2.