中文摘要：

成功研制了栅长为0．15μm、栅宽为2×50μm、源漏间距为2txm的InP基In0.52Al0.48As／In0.53Ga0.47As高电子迁移率器件．室温下，当器件％s为1．7V、VGS为0．1V时，其有效跨导达到了1052mS／mm．传输线方法（TLM）测试显示器件的接触电阻为0．032Ω·mm，器件欧姆接触电阻率为1．03×10-7Ω·cm-2．正是良好的欧姆接触及其短的源漏间距减小了源电阻，进而使得有效跨导比较大．器件有比较好的射频特性．从100MHz到40GHz，S参数外推出来的fT和fmax分别为151GHz和303GHz．所报道的HEMT器件非常适合毫米波段集成电路的研制．

英文摘要：

0.15 μm gate-length InP-based In0.52Al0.48As/In0.53Ga0.47As high electron mobility transistors （HEMTs） were successfully fabricated with gate-width of 2 x 50 p,m and source-drain space of 2 μm. The maximum extrinsic transcon- ductance （ginext） of 1 052 mS/mm was obtained under gate-source voltage （Vos） of 0. 1 V and drain-source voltage （VDS） of 1.7 V at room temperature. Transmission Line Method （TLM） measurements revealed the contact resistance of 0. 032 Ω·mm and the specific contact resistivity of 1.03 ×10-7Ω·cm-2 on linear TLM patterns. Thus, markedly en- hanced gmext was achieved by the superb Ohmic contact and the short source-drain space for minimizing series source re- sistance. These devices also demonstrated excellent RF characteristics. The fT and fmax extrapolated using the S-parame- ters measured from 100 MHz to 40 GHz were 151 GHz and 303 GHz, respectively. The HEMTs were promising for mil- limeter-wave band integrated circuits.