位置：成果数据库 > 期刊 > 期刊详情页
Interface processing of amorphous-crystalline siliconheterojunction prior to the formation of amorph
  • ISSN号：2156-3381
  • 期刊名称：IEEE Journal of Photovoltaics
  • 时间：0
  • 页码：-
  • 相关项目：基于异质结晶体硅太阳电池的a-SiOx:H薄膜生长和钝化机理研究
作者： Jinning Liu|Dongliang Wang|Fanying Meng|Zhengxin Liu|
同期刊论文项目
基于异质结晶体硅太阳电池的a-SiOx:H薄膜生长和钝化机理研究
期刊论文 10 会议论文 5
同项目期刊论文
Characterization of microvoids in thin hydrogenated amorphous silicon layers by spectroscopic ellips
异质结太阳电池中非晶 钝化层的分光椭偏分析
Influence of precursor a-Si:H dehydrogenation on the aluminum induced crystallization process
分光椭偏技术在铟锡氧薄膜光电特性研究中的应用
Improved passivation effect at the amorphous/crystalline silicon interface due to ultrathin SiOx lay
Defining a parameter of plasma-enhanced CVD to characterize the effect of silicon-surface passivatio
Study of the correlation between the microstructure of hydrogenated amorphous silicon and the passiv
Investigation of positive roles of hydrogen plasma treatment for interface passivation based on sili
硅锗量子阱结构在硅异质结太阳电池中应用的数值模拟