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Improved passivation effect at the amorphous/crystalline silicon interface due to ultrathin SiOx lay
  • ISSN号：1882-0778
  • 期刊名称：Applied Physics Express
  • 时间：2014.5.15
  • 页码：065504-1-065504-4
  • 相关项目：基于异质结晶体硅太阳电池的a-SiOx:H薄膜生长和钝化机理研究
作者： Wanwu Guo|Dongliang Wang|Fanying Meng|Zhengxin Liu|
同期刊论文项目
基于异质结晶体硅太阳电池的a-SiOx:H薄膜生长和钝化机理研究
期刊论文 10 会议论文 5
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