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Defining a parameter of plasma-enhanced CVD to characterize the effect of silicon-surface passivatio
  • ISSN号：0021-4922
  • 期刊名称：Japanese Journal of Applied Physics
  • 时间：0
  • 页码：-
  • 相关项目：基于异质结晶体硅太阳电池的a-SiOx:H薄膜生长和钝化机理研究
作者： Wenzhu Liu|Zhiqian Feng|Pierre J. Verlinden|Zhengxin Liu|
同期刊论文项目
基于异质结晶体硅太阳电池的a-SiOx:H薄膜生长和钝化机理研究
期刊论文 10 会议论文 5
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