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Effects of ultrathin AlAs interfacial layer on the structure and optical properties of GaInP epilaye
  • ISSN号：0169-4332
  • 期刊名称：Applied Surface Science
  • 时间：2014.10.30
  • 页码：828-832
  • 相关项目：内嵌量子点三结(Al)GaInP/InGaAs/Ge太阳电池材料的MBE生长及器件相关问题研究
作者： Pan Dai|Junxia Chen|Shulong Lu|Hui Yang|
同期刊论文项目
内嵌量子点三结(Al)GaInP/InGaAs/Ge太阳电池材料的MBE生长及器件相关问题研究
期刊论文 24
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