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room-temperature wafer bonded GaInP/GaAs/InGaAsP/InGaAs four-junction solar cell grown by all-solid
ISSN号:1882-0778
期刊名称:Appl. Phys. Express
时间:2015.12.3
页码:-
相关项目:内嵌量子点三结(Al)GaInP/InGaAs/Ge太阳电池材料的MBE生长及器件相关问题研究
作者:
Yuanyuan Wu|Ming Tan|Lifeng Bian|Hui Yang|
同期刊论文项目
内嵌量子点三结(Al)GaInP/InGaAs/Ge太阳电池材料的MBE生长及器件相关问题研究
期刊论文 24
同项目期刊论文
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Carrier recombination dynamics of MBE grown InGaAsP layers with 1 eV bandgap for quadruple-junction
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基于金属背支撑刻蚀技术的柔性AlGaInP/AlGaAs/GaAs三结太阳电池研制
基于分子束外延生长的1.05 eV InGaAsP的超快光学特性研究
A GaAs/GalnP dual junction solar cell grown by molecular beam epitaxy
Optimization of In0.68Ga0.32As Thermophotovoltaic Device Grown on Compositionally Nonmonotonically G
Compositionally undulating step-graded InAsyP1-y buffer layer growth by metal-organic chemical vapor
The investigation of GaInP solar cell grown by all-solid MBE