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Photoluminescence and Raman studies on Ge-based complexes in Si-doped GaInP epilayers grown on Germa
  • ISSN号：0021-8979
  • 期刊名称：JOURNAL OF APPLIED PHYSICS
  • 时间：2012.7.15
  • 页码：-
  • 相关项目：内嵌量子点三结(Al)GaInP/InGaAs/Ge太阳电池材料的MBE生长及器件相关问题研究
作者： Jiang, D. S.|Dong, J. R.|Tackeuchi, A.|Yang, H.|
同期刊论文项目
内嵌量子点三结(Al)GaInP/InGaAs/Ge太阳电池材料的MBE生长及器件相关问题研究
期刊论文 24
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基于金属背支撑刻蚀技术的柔性AlGaInP／AlGaAs／GaAs三结太阳电池研制
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