采用动态蒸馏提纯技术,配合优化的均化熔融和低温焯冷法技术,制备了高纯度的As40S60和As38S62硫系玻璃;通过高效挤压法制备出芯包结构的硫系光纤预制棒;在聚合物——聚醚砜树脂(PES)的保护下拉制出比例精确、离心率接近于0且损耗低的As40S60/As38S62芯包结构的硫系玻璃光纤。挤压过程可基本消除芯包界面的缺陷,从根本上降低了光纤的制备损耗。测试数据表明:经过有效提纯后,As40S60玻璃的红外透射率明显提高,绝大多数杂质吸收峰被消除。对芯包结构光纤输入端涂覆Ga层后,通过截断法进行了损耗测试,该光纤的传输背景损耗维持在0.2dB/m,在4.8μm处获得约为0.13dB/m的最低损耗。
A specialized dynamic distillation and purification process is used and cooperated with the optimized homogenized melt and the low-temperature quenching techniques to obtain high purity As40 S60 and As38 S62 glass. Then an efficient extrusion method is applied to the preparation of a core-cladding chalcogenide optical fiber preform. After that, under the protection of the polymer, which is polyethersulfone (PES), the preform is drawn into the As40 S60/As38 S62 core-cladding structure chalcogenide optical fiber with precise proportion, eccentricity closing to zero and low loss. After the high pressure extrusion process, the defects in the core-cladding interface are nearly eliminated, and thus the fiber loss is reduced effectively. The experimental results show that the infrared transmittance of As40S60 glass is obviously improved after effective purification and most impurity absorption bands in the spectra disappear. After the surface of fiber input ends is coated the Ga layer, the standard cut-back technique is adopted to measure the attenuation of this As40S60/As38S62 fiber. The transmitting background loss is around 0.2 dB/m, and the minimum loss is about 0.13 dB/m at 4.8 μm.