中文摘要：

A model of Er3+-doped chalcogenide glass(Ga5Ge20Sb10S65) microstructured optical fiber(MOF) amplifier under the excitation of 980 nm is presented to demonstrate the feasibility of it applied for 1.53 μm band optical communications.By solving the Er3+ population rate equations and light power propagation equations,the amplifying performance of 1.53 μm band signals for Er3+-doped chalcogenide glass MOF amplifier is investigated theoretically.The results show that the Er3+-doped chalcogenide glass MOF exhibits a high signal gain and broad gain spectrum,and its maximum gain for small-signal input(-40 dBm) exceeds 22 dB on the 300 cm MOF under the excitation of 200 mW pump power.Moreover,the relations of 1.53 μm signal gain with fiber length,input signal power and pump power are analyzed.The results indicate that the Er3+-doped Ga5Ge20Sb10S65 MOF is a promising gain medium which can be applied to broadband amplifiers operating in the third communication window.

英文摘要：

A model of Er3＋-doped chalcogenide glass （GasGe20Sb10S65） microstructured optical fiber （MOF） amplifier under the excitation of 980 nm is presented to demonstrate the feasibility of it applied for 1.53 μm band optical communications. By solving the Er3＋ population rate equations and light power propagation equations, the amplifying performance of 1.53 μm band signals for Er3＋-doped chalcogenide glass MOF amplifier is investigated theoretically. The results show that the Er6＋-doped chalcogenide glass MOF exhibits a high signal gain and broad gain spectrum, and its maximum gain for small-signal input （-40 dBm） exceeds 22 dB on the 300 cm MOF under the excitation of 200 mW pump power Moreover, the relations of 1.53 μm signal gain with fiber length, input signal power and pump power are analyzed. The results indicate that the Er3＋-doped Ga5Ge20Sb10S65 MOF is a promising gain medium which can be applied to broadband amplifiers operating in the third communication window.