中文摘要：

为了研究Eu^3＋掺杂MoS2薄膜的光电特性,采用气相运输沉积法在p-Si衬底上沉积MoS2薄膜,并利用原子力显微镜（AFM）、X射线衍射仪（XRD）、霍尔效应仪、分光光度计和光致发光光谱仪研究了Eu^3＋掺杂对MoS2薄膜的表面形貌﹑晶体结构﹑光吸收以及MoS2-Si异质结的光电流的影响。研究表明：Eu^3＋掺杂使MoS2薄膜的结晶更好;同时MoS2薄膜的电子迁移率和电导率增加了一个数量级,并使MoS2-Si异质结具有良好的伏安特性和光电响应。另外,Eu^3＋掺杂增强了MoS2薄膜的光吸收,并使MoS2薄膜在室温下产生红光。以上结果表明,Eu^3＋掺杂MoS2薄膜可用于制作高效率的发光与光电子器件。

英文摘要：

To study the photoelectric characteristics of Eu^3＋-dOped MoS2 thin films, the MoS2 thin films were deposited on the p-Si substrates by the vapor transport deposition method. And the effects of the Eu^3＋ doping on the surface morphology, crystal structure, light absorption of MoS2 thin films and the photocurrent of the MoS2-Si heterojunction were studied by the atomic force microscope （AFM）, X-ray diffractometer （XRD）, Hall-effect device, spectrophotometer and photoluminescence spectrometer. The research shows that the crystallinity of the Eu3＋ -doped MoS_, thin film is better. Meanwhile, the electron mobility and conductivity of the MoS2 thin films increase an order of magnitude, and the MoS2-Si heterojunction has good voltage-current characteristic and photoelectric response. Moreover, the Eu^3＋-doped MoS2 thin films exhibit strong light absorption and produce red light at room temperature. The results show that the Eu^3＋ -doped MoS2 thin films can be used to fabricate high efficient luminescence and optoelectronic devices.