在基于GaAs/A1GaAs异质结二维电子气的声表面波单电子输运器件中,利用声表面波诱发的动态量子点依次通过由串联的三对刻蚀门电极各自所形成的准一维通道,成功实现了电子的量子化动态输运,并对输运特性进行了分析.通过提出局域态杂质模型和电子的屏蔽效应,解释了实验中观测到的双峰声电电流现象.
The surfaceacousticwave singleelectrontransport device is fabricated on GaAs/A1GaAs heterostructure. In contrast to the previous studies, the moving quantum dots induced by SAW go through the quasionedimensional channel defined by three pairs of etched split gates in series, and then the quantized dynamic electron transfer is successfully realized. The transport property is analyzed, and the localized impurity states model and the screening effect are presented to explain the observed double-peak like current as a function of gate voltage.