中文摘要：

通过在AlxGa1-xAs/GaAs异质结表面制作一对分裂门,获得了用于实现声表面波单电子输运的准一维量子线.实验研究了0.3 K时电子沿该量子线的输运性质.通过自洽求解二维薛定谔方程和泊松方程,分析了该量子线的导带能量和电子浓度的分布,并讨论了量子线宽度对分裂门方向形成限制势的影响.特别是对其线性电子浓度随温度及分裂门电压的变化关系进行了数值模拟,所得到的钳断电压与实验测量值符合较好.

英文摘要：

By fabricating a split gate on the surface of Alx Ga1 - x As/GaAs heterostructure, we experimentally obtain a quasi-one- dimensional quantum wire. This structure could be used to implement single-electron transport driven by surface acoustic waves. Based on structures of conduction band and distribution of electrons in the fabricated quantum wires, the influence of quantumwire widths on the confining potential of the electrons is also discussed. Especially, we numerically study how the linear electron concentration depends on the applied split-gate voltage. For the quantum wires fabricated, we find that the calculated pinch-off voltages agree well with the relevant experimental values measured at 0. 3 K.