中文摘要：

采用乙炔作为碳源,分析了碳源浓度、生长时间等参数对铜基石墨烯成核密度、生长速率及单层覆盖率的影响,通过热氧化法系统展示了石墨烯形核、长大、生长结束的全过程.研究发现;碳源浓度较小时成核密度较低,所得石墨烯晶粒更大,但单个多层点的面积较大,且多以双层为主;在石墨烯生长过程中,氢气既可辅助碳氢化合物分解,同时也会刻蚀部分成核点,从而促进石墨烯质量的提高;基于单层率与晶粒尺寸之间的平衡,采用乙炔与氢氩混合气(体积比为1∶9)流速比为5∶100作为生长石墨烯的气体工艺参数,获得了透过率约为97.1%,缺陷较少且以单层为主的大面积石墨烯.

英文摘要：

T he effects of concentration and deposition time on nucleation density ,grow th rate and the coverage fraction of single layer graphene were discussed with ethyne as the precursor of activated car-bon .The nucleation ,grain growth ,and ending phenomenon were displayed by hot plate method .It is found that with the decrease of ethyne concentration ,the bigger the graphene grain size ,the bigger the area of multi-layer graphene ,w hich is mainly composed of double layer graphene .During the dep-osition process ,the hydrogen not only can assist the break-dow n of hydrocarbon ,but also can etch parts of nucleation sites ,and then promotes the graphene quality .Based on the tradeoff between the single layer ratio and grain size of graphene ,the optimized process parameter with the ethyne/mixing gas (φ(H2 )∶ φ(Ar)=1∶9) ratio of 5∶100 is used for the fabrication and graphene with transparency of 97 .1% ,low defect density ,and mainly composed of single layer graphene is obtained .