中文摘要：

铜作为一种在化学气相沉积法制备石墨烯中被广泛采用的衬底材料，其表面形貌和质量对石墨烯的品质有较大的影响．提出了一种简单有效的铜衬底预处理方法，在生长石墨烯前，将铜衬底在浓度为1mol／L的硝酸铁水溶液中进行预刻蚀，研究了不同刻蚀时间的影响．发现当预刻蚀时间为90S时，经石墨烯生长后得到了相对平整且无杂质颗粒的表面；与盐酸预刻蚀及电化学抛光方法进行了比较，实验结果表明，硝酸铁溶液预刻蚀的效果优于盐酸处理，可与电化学抛光效果比拟，且操作更为简单快捷．经过不同型号铜衬底实验验证，此方法具有普遍适用性．

英文摘要：

Graphene synthesis by chemical-vapor-deposition （CVD） has attracted great interest. As the substrates for graphene growth, copper has become a common choice because its capacity could produce high-quality and uniform monolayer graphene. Morphology and surface conditions of the copper foil have great influence on the quality of the graphene grown on it. Here we report a rapid and effective copper pre-treatment method to improve the quality of graphene. After a pre-etching in 1 mol/L Fe（NO3）3 aqueous solutions for 90 s, the quality of the copper foil surface has been improved. Compared with the HCl treatment and electro-chemical polishing, Fe（NO3）3 pre-etching can generate a better result and has been verified to have general applicability for different types of copper foils.