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Analytical drain current modeling of dual-material surrounding-gate MOSFETs
  • ISSN号：0916-8524
  • 期刊名称：IEICE - Transactions on Electronics
  • 时间：2011
  • 页码：1120-1126
  • 相关项目：基于NoC的同构多核SoC并发在线测试研究
作者： Li, Zunchao|Xu, Jinpeng|Liu, Linlin|Liang, Feng|Mei, Kuizhi|
同期刊论文项目
基于NoC的同构多核SoC并发在线测试研究
期刊论文 8 专利 1 著作 1
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