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A subthreshold current model of fully-depleted silicon-on-insulator metal-oxide-semiconductor field
  • ISSN号：0021-4922
  • 期刊名称：Japanese Journal of Applied Physics
  • 时间：2012
  • 页码：1-5
  • 相关项目：基于NoC的同构多核SoC并发在线测试研究
作者： Zhang, Guohe|Chen, Kebin|Liang, Feng|
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基于NoC的同构多核SoC并发在线测试研究
期刊论文 8 专利 1 著作 1
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