位置：成果数据库 > 期刊 > 期刊详情页
A novel single event upset hardened CMOS SRAM cell
  • ISSN号：1349-2543
  • 期刊名称：IEICE Electronics Express
  • 时间：2012.2.2
  • 页码：140-145
  • 相关项目：基于NoC的同构多核SoC并发在线测试研究
作者： Zhang, Guohe|Shao, Jun|Liang, Feng|Bao, Dongxuan|
同期刊论文项目
基于NoC的同构多核SoC并发在线测试研究
期刊论文 8 专利 1 著作 1
同项目期刊论文
A subthreshold current model of fully-depleted silicon-on-insulator metal-oxide-semiconductor field
Analytical drain current modeling of dual-material surrounding-gate MOSFETs
采用多维相似性的测试压缩
Low-power programmable linear-phase filter designed for fully balanced bio-signal recording applicat
Test Patterns of Multiple SIC Vectors: Theory and Application in BIST Schemes
一种低功耗测试图形的生成方法
A Subthreshold Swing Model for Fully - Depleted Silicon-on-Insulator Metal--Oxide--Semiconductor Fie