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Significant quality improvement of GaN on Si(111) upon formation of an AlN defective layer
  • ISSN号：1466-8033
  • 期刊名称：CrystEngComm
  • 时间：2014
  • 页码：7525-7528
  • 相关项目：利用玻璃衬底制备新型InGaN基量子点全光谱太阳电池材料研究
作者： Zhang, Heng|Kong, Susu|Zhao, Guijuan|Liu, Xianglin|
同期刊论文项目
利用玻璃衬底制备新型InGaN基量子点全光谱太阳电池材料研究
期刊论文 25 会议论文 4
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