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Interface roughness scattering considering the electrical field fluctuation in undoped AlxGa1-xN/GaN
  • ISSN号：0268-1242
  • 期刊名称：Semiconductor Science and Technology
  • 时间：2014.4
  • 页码：-
  • 相关项目：利用玻璃衬底制备新型InGaN基量子点全光谱太阳电池材料研究
作者： Wei, Hongyuan|Liu, Xianglin|Zhu, Qinsheng|Wang, Zhanguo|
同期刊论文项目
利用玻璃衬底制备新型InGaN基量子点全光谱太阳电池材料研究
期刊论文 25 会议论文 4
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